PTFA080551E
PTFA080551F
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt, internally
matched GOLDMOS ® FETs intended for EDGE and CDMA
applications in the 869 to 960 MHz band. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA080551E
Package 30265
PTFA080551F
Package 31265
Features
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
Broadband internal matching
•
Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
•
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
•
Pb-free and RoHS compliant
Efficiency
35
-40
30
-45
25
-50
ACP Low
20
-55
ACP Up
15
10
-60
ALT Up
-65
5
0
Adj. Ch. Power Ratio (dBc)
-35
40
Drain Efficiency (%)
•
-70
29
31
33
35
37
39
41
43
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 26 W, ƒ = 959.8 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
EVM (RMS)
—
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–75
—
dBc
Gain
Gps
—
18
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
18
18.5
—
dB
Drain Efficiency
ηD
46.5
48
—
%
Intermodulation Distortion
IMD
—
–31
–29
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
RDS(on)
—
0.15
—
V
On-State Resistance
VGS = 10 V, V DS = 0.1 V
Operating Gate Voltage
VDS = 28 V, IDQ = 450 mA
VGS
2.0
2.3
3.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
219
W
1.25
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
0.8
°C/W
Ordering Information
Type
Package Outline
Package Description
Marking
PTFA080551E
30265
Thermally-enhanced slotted flange, single-ended
PTFA080551E
PTFA080551F
31265
Thermally-enhanced earless flange, single-ended
PTFA080551F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Typical Performance (data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz
VDD = 28 V, ƒ = 959.8 MHz, POUT = 22 W
1.7
-40
1.5
-50
400 kHz
1.3
-60
-70
1.1
0.9
600 kHz
0.7
0.35
0.40
0.45
0.50
0.55
-80
55
Efficiency
-20
45
-40
35
400 kHz
25
-60
-80
15
600 kHz
5
-100
-90
0.60
Drain Efficiency (%)
-30
EVM
Modulation Spectrum (dBc)
1.9
EVM RMS (avg. %) .
0
-20
Modulation Spectrum (dBc)
2.1
32
34
36
38
40
42
44
46
Output Power (dBm)
Quiescent Current (A)
EDGE EVM Performance
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 450 mA, ƒ1 = 959 MHz, ƒ2 = 960 MHz
10
55
8
45
-20
35
Efficiency
4
25
2
15
EVM
IMD (dBc)
6
-30
Drain Efficiency (%)
EVM RMS (avg. %) .
-25
-35
-40
3rd Order
-45
-50
5th
-55
-60
0
5
32
34
36
38
40
42
44
46
30
Output Power (dBm)
Data Sheet
7th
-65
32
34
36
38
40
42
44
46
Output Power, Avg. (dBm)
3 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Typical Performance (cont.)
Broadband CW Performance (at P-1dB)
IM3 vs. Output Power at Selected Biases
VDD = 28 V, IDQ = 450 mA
VDD = 28 V, ƒ1 = 959, ƒ 2 = 960 MHz
65
Gain (dB)
19
18
Gain
60
55
17
Output Power
16
15
860
880
900
920
940
50
45
960
-20
-25
225 mA
-30
IMD (dBc)
Efficiency
Efficiency (%), Output Power (dBm)
70
20
-35
675 mA
-40
-45
-50
450 mA
-55
-60
29
31
Frequency (MHz)
35
37
39
41
43
Linear Broadband Performance
Power Sweep
VDD = 28 V, IDQ = 450 mA, POUT Avg = 44.39 dBm
VDD = 28 V, ƒ = 960 MHz
30
19.0
20
Gain
40
10
35
0
30
-10
Return Loss
25
20
860
19.5
-20
880
900
920
940
Power Gain (dB)
45
40
Gain, Return Loss (dB)
Efficiency
50
47
IDQ = 675 mA
18.5
IDQ = 450 mA
18.0
17.5
17.0
16.5
IDQ = 225 mA
16.0
-30
960
36
Frequency (MHz)
Data Sheet
45
Output Power, Avg. (dBm)
55
Efficiency (%)
33
38
40
42
44
46
48
50
Output Power (dBm)
4 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
Output Power (P–1dB) vs. Drain Voltage
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
IDQ = 450 mA, ƒ = 960 MHz
70
51
20
60
50
50
Gain
18
40
17
30
16
Efficiency
15
Drain Efficiency (%)
Gain (dB)
19
Output Power (dBm)
21
20
36
38
40
42
44
46
48
48
47
46
45
10
14
49
24
50
26
Output Power (dBm)
Bias Voltage vs. Temperature
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
-20
30
-30
-40
ACP FC – 0.75 MHz
20
-50
15
-60
10
-70
5
-80
ACPR FC + 1.98 MHz
0
Normalized Bias Voltage (V)
35
0.44 A
Adj. Ch. Power Ratio (dBc)
Drain Efficiency (%)
-10
Efficiency
33
35
37
39
41
43
0.73 A
1.01
1.10 A
1.00
2.20 A
0.99
3.30 A
4.41 A
0.98
5.51 A
0.97
0.96
0
20
40
60
80
100
Case Temperature (°C)
Output Power, Avg. (dBm)
Data Sheet
1.02
0.95
-20
-90
31
0.15 A
1.03
0
40
29
32
Voltage normalized to typical gate voltage,
series show current
TCASE = 90°C
25
30
IS-95 CDMA Performance
TCASE = 25°C
45
28
Drain Voltage (V)
5 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Broadband Circuit Impedance
D
Z Source
Z Load
G
S
Z Source Ω
Frequency
Z Load Ω
MHz
R
jX
R
jX
869
8.91
–10.93
7.42
–1.63
880
3.72
–8.28
4.65
–1.74
894
5.93
–5.43
4.61
0.16
920
4.87
–7.16
4.88
–0.59
960
6.05
–5.57
4.89
0.86
See next page for circuit information
Data Sheet
6 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
BCP56
V DD
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
5.1 V
R6
10 V
L1
V DD
C5
0.1µF
R7
5.1K
C6
0.1µF
C7
0.01µF
C8
33pF
C12
33pF
l5
R8
10 V
C9
33pF
l1
R F_IN
l3
l4
C10
3.3pF
C11
1.0pF
C16
10µF
50V
l6
C23
33pF
DUT
l2
C15
0.1µF
C14
10µF
50V
C13
1µF
l8
l9
l10
l11
C22
0.3pF
l7
R F_OUT
a 0
8 0
5 1
e f_
s c
_ 0
h
6 -0
3 -1
3
C4
10µF
35V
L2
C17
33µF
C18
1µF
C19
10µF
50V
C20
0.1µF
C21
10µF
50V
Reference circuit schematic diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT
PCB
PTFA080551E or PTFA080551F
0.76 mm [.030"] thick, εr = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
Electrical Characteristics at 960 MHz1
Dimensions: L x W (mm)
Dimensions: L x W (in.)
l1
l2
l3
l4
l5
l6, l7
l8
l9
l10
l11
0.070
0.122
0.031
0.063
0.162
0.150
0.198
0.145
0.009
0.026
λ, 50.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω
λ, 7.5 Ω
λ, 67.0 Ω
λ, 55.0 Ω
λ, 11.1 Ω
λ, 38.0 Ω
λ, 38.0 Ω
λ, 50.0 Ω
12.19 x 1.37
20.93 x 1.37
5.31 x 1.37
9.58 x 16.21
28.45 x 0.79
25.65 x 1.17
30.73 x 10.46
24.21 x 2.16
1.52 x 2.16
4.50 x 1.37
0.480
0.824
0.209
0.377
1.120
1.010
1.210
0.953
0.060
0.177
x
x
x
x
x
x
x
x
x
x
0.054
0.054
0.054
0.638
0.031
0.046
0.412
0.085
0.085
0.054
1Electrical characteristics are rounded.
Data Sheet
7 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Reference Circuit (cont.)
R5
R4 R3 C3
C1
QQ1
C4
C5
C8
C16
R7
C2
R1R2
C7
C12
Q1
C6
L1
C13
C14
C15
R8
R6
C22 C23
C9
C10
C11
C20
C19
C17
C18
L2
C21
A080551in_01
A080551out_01
a080551ef_assy- 06-03-14
Reference circuit assembly diagram (not to scale)*
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4
C5, C6, C15, C20
C8, C9, C12, C17,
C23
C7
C10
C11
C13, C18
C14, C16, C19, C21
C22
L1, L2
Q1
QQ1
R1
R2
R3
R4
R5, R7
R6, R8
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 33 pF
Digi-Key
Digi-Key
Digi-Key
ATC
PCC1772CT-ND
399-1655-2-ND
PCC104BCT-ND
100B 330
Capacitor, 0.01 µF
Ceramic capacitor, 3.3 pF
Ceramic capacitor, 1.0 pF
Capacitor, 1.0 µF
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 0.3 pF
Ferrite, 8.9 mm
Transistor
Voltage regulator
Chip Resistor 1.2 k-ohms
Chip Resistor 1.3 k-ohms
Chip Resistor 2 k-ohms
Potentiometer 2 k-ohms
Chip Resistor 5.1 k-ohms
Chip Resistor 10 ohms
ATC
ATC
ATC
ATC
Garrett Electronics
ATC
Elna Magnetics
Infinion Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
200B 103
100B 3R3
100B 1R0
920C105
TPSE106K050R0400
100B 0R3
BDS 4.6/3/8.9-4S2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P5.1KECT-ND
P10ECT-ND
*Gerber Files for this circuit available on request
Data Sheet
8 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Package Outline Specifications
Package 30265
7.11
[.280]
(45° X 2.03
[.080])
CL
D
S
2X 2.59±0.38
[.107 ±.015]
CL
FLANGE 9.78
[.385]
15.60±0.51
[.614±.020]
LID 10.16±0.25
[.400±.010]
G
2X R1.60
[.063]
2x 7.11
[.280]
4x 1.52
[.060]
15.23
[.600]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
3.48±0.38
[.137±.015]
0.0381 [.0015] -A-
20.31
[.800]
1.02
[.040]
H-30265-2-1-2303
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 01, 2006-03-16
PTFA080551E
PTFA080551F
Package Outline Specifications (cont.)
Package 31265
(45° X 2.03
[.080])
2X 2.59±0.51
[.102±.020]
D
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
15.49±.51
[.610±.020]
10.16
[.400]
G
R1.27
[R.050]
4X R0.63
[R.025] MAX
2X 7.11
[.280]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
0 . 0 2 5 [. 0 0 1 ] -A-
3.56±.38
[.140±.015]
S
10.16
[.400]
1.02
[.040]
265-cases_31265
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 01, 2006-03-16
PTFA080551E/F
Confidential, Limited Internal Distribution
Revision History:
2006-03-16
Previous Version:
none
Page
Subjects (major changes since last revision)
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2006-03-16
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 01, 2006-03-16
